The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2000
Filed:
Jan. 15, 1999
Applicant:
Inventors:
Yi Ma, Orlando, FL (US);
Stefanie Chaplin, Tempe, AZ (US);
Stephen Carl Kuehne, Orlando, FL (US);
Brittin Charles Kane, Clermont, FL (US);
Michael A Laughery, Orlando, FL (US);
Assignee:
Lucent Technologies, Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438558 ; 438510 ; 438522 ; 438542 ; 438546 ; 438547 ; 438548 ; 438558 ;
Abstract
A method and structure providing a dual layer silicon gate film having a uniform boron distribution therein and an ordered, uniform grain structure. Rapid thermal annealing is used to cause the diffusion of boron from an originally doped film to an originally undoped film, resulting in a uniform boron distribution within the structure, thereby rendering the structure resistant to vertical and lateral diffusion of the boron during subsequent processing at elevated temperatures.