The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2000
Filed:
May. 07, 1998
Applicant:
Inventors:
Sen-Fu Chen, Taipei, TW;
Chih-Heng Shen, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430313 ; 430314 ; 438 45 ;
Abstract
A method is provided for forming a plurality of structures with different resistance values in a single polysilicon film as follows. Form a polysilicon layer upon a substrate. Pattern the polysilicon to expose a portion thereof which is to be reduced in thickness. Partially etch through the polysilicon to produce a reduced thickness thereof while leaving the remainder of the polysilicon with the original thickness. Dope the polysilicon layer through the polysilicon with variable doping as a function of the reduced thickness and the original thickness of the polysilicon.