The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2000
Filed:
Dec. 23, 1998
Eiichi Iino, Gunma-ken, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
There is disclosed a method of producing a silicon monocrystal using a Czochralski method in which a sharp tip end of a seed crystal is brought into contact with silicon melt and is melted, and the seed crystal is then pulled, without performance of a necking operation, in order to grow a silicon monocrystalline ingot below the seed crystal. The operation of melting the seed crystal into the silicon melt is performed in a state in which a temperature in the vicinity of the surface of the silicon melt is set in a range between a temperature 25.degree. C. higher than the melting point of silicon and a temperature 45.degree. C. higher than the melting point of silicon. The operation of growing the monocrystal is started within 0 to 10 minutes after completion of the operation of melting the sharp tip end of the seed crystal into the silicon melt. The monocrystal is grown at a rate in a range of 0.3 to 0.7 mm/min when growth of the monocrystal is started after completion of the melting operation. The method can grow the silicon monocrystal ingot with a high success rate in making the silicon monocrystal ingot dislocation free, and can improve productivity of silicon monocrystal ingots.