The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
May. 29, 1998
Applicant:
Inventors:
Mark Jon Loboda, Midland, MI (US);
Jeffrey Alan Seifferly, Bay City, MI (US);
Assignee:
Dow Corning Corporation, Midland, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438786 ; 438778 ; 438758 ;
Abstract
This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.
Loboda, Mark. (2000). Method for producing hydrogenated silicon oxycarbide films having low (U.S. Patent No. 6159871). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6159871
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile