The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
Nov. 04, 1998
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabicrating a flash memory. A semiconductor substrate having a field oxide layer which comprises a plurality of parallel oxide lines, a plurality of parallel word lines perpendicular to the parallel oxide lines, a dielectric layer having a same structure as and under the word lines, a plurality of floating gates separated by the field oxide layer from each other under the dielectric layer, and a plurality of regions encompassed by the field oxide laver and the word lines is provided. A first step of ion implantation to the substrate is performed by using the word lines as masks, so that a plurality of source regions and a plurality of drain regions are formed beside the word lines. Whereas each of the source regions and each of the drain regions are formed in the regions encompassed by the field oxide layer and the word lines. A photo-resist layer is formed to cover the drain regions. A second step of ion implantation to the substrate is performed by using the photo-resist layer and the parallel word lines as masks. The photo-resist layer is removed.