The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
Oct. 01, 1998
Applicant:
Inventors:
Yang Pan, Singapore, SG;
Erzhuang Liu, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438167 ; 438182 ;
Abstract
Disclosed is a method of fabricating a semiconductor field effect transistor, wherein the gate has a short foot portion in contact with the semiconductor substrate for a short gate length and consequent low capacitance, and a large amount of metal in a contact portion for low gate resistance. Salicides are formed on the T-gate source on drain contact areas resulting in large, low resistance contact areas.
Pan, Yang. (2000). Way to fabricate the self-aligned t-shape gate to reduce gate resistivity (U.S. Patent No. 6159781). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6159781
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile