Content addressable memory cell and array architectures having low

Abstract

An SRAM-based CAM cell and CAM array architecture reduce transistor count and memory size by replacing pass transistors and search transistors of conventional SRAM-base CAM cells with a pair of transistors having gates coupled to bit lines. The two bit-line-controlled transistors in a CAM cell are between storage nodes and a word/match line for the CAM cell. The sizes of pull-up and pull-down devices in the CAM cells are selected so that grounding a storage node to a word/match line through one of the two bit-line-controlled transistors can change the bit stored in a CAM cell, but applying a voltage (near the supply voltage) from the word/match line through either of the two bit-line-controlled transistors to a storage node cannot change the bit or data stored in a CAM cell. Accordingly, a write operation grounds a selected word/match line and applies a voltage to the unselected word/match lines. A search operation charges all word/match lines and senses the word/match lines. Addition of a mask element that controls the connection of the CAM cell to the word/match line can convert a binary CAM architecture to a ternary CAM architecture. The mask element optionally includes circuitry that causes the mask element to power up in a known state. Within the ternary CAM cell, a bypass transistor can be provide to bypass the effect of the mask element and facilitate write operations or temporarily suspend local masking.