The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2000
Filed:
Mar. 12, 1998
Applicant:
Inventor:
Hironori Sakamoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06G / ; G06G / ;
U.S. Cl.
CPC ...
703 12 ; 703-2 ; 703-3 ; 703 13 ;
Abstract
A distribution of the concentration of initial point-defects which generate in an ion implanting process is obtained with an ion implanting simulator. As a local function of the distribution, the distribution of the intensity of absorption of point-defects is obtained. A term of absorption of point-defects obtained from the distribution of the intensity is included in a diffusion equation. With the resultant diffusion equation, the diffusion simulation is performed. Thus the simulation using the diffusion equation may be extended to two or three dimension and cope with various ion implanting conditions.