The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2000
Filed:
Nov. 09, 1998
Kin-Leong Pey, Singapore, SG;
Soh-Yun Siah, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method for a salicide process where S/D silicide contacts are formed in a separate silicide step than the gate silicide contacts. Preferably, TiSi.sub.2 is formed on S/D regions and TiSi.sub.2 or CoSi.sub.2 is formed on Poly electrodes (lines or gates) by etching back a sidewall spacer on the poly electrodes. The invention has two silicide steps. The TiSi.sub.2 is formed over the S/D regions while the gate electrode is protected by a silicon nitride Cap layer. Next, an ILD layer formed over the S/D regions. The interlevel dielectric (ILD) layer, cap layer and spacers on the sidewalls of the gate electrodes are etched back. The invention has two embodiments for the composition of the spacers. In a second silicide step, Titanium silicide (TiSi.sub.x or TiSi.sub.2) or Cobalt silicide (CoSi.sub.x or CoSi.sub.2) is formed on the top and sidewalls of the electrodes. A key feature of the invention is that the gate contact silicide is formed on the top and sidewalls of the electrodes.