The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2000

Filed:

Jan. 07, 1997
Applicant:
Inventors:

Sailesh M Merchant, Orlando, FL (US);

Arun K Nanda, Austin, TX (US);

Pradip K Roy, Orlando, FL (US);

Hem M Vaidya, Orlando, FL (US);

Assignee:

Lucent Technologies Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438199 ; 438592 ; 20419217 ;
Abstract

Methods of manufacturing a semiconductor device. One method includes the steps of: (1) providing a substrate over which is to be deposited a metal silicide layer having a stoichiometric ratio within a desired range, (2) providing a target composed of a metal silicide, the target subject to degradation by reason of use, (3) sputtering atoms from the target to form the metal silicide layer over the substrate, the stoichiometric ratio subject to being without the desired range by reason of the degradation of the target and (4) depositing a predetermined amount of silicon on the metal silicide layer to return the stoichiometric ratio to within the desired range, a useful life of the target thereby increased.


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