The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Nov. 30, 1999
Johnathan E Faltermeier, Lagrange, NY (US);
Ulrike Gruening, Wappingers Falls, NY (US);
Suryanarayan G Hegde, New York, NY (US);
Rajarao Jammy, Wappingers Falls, NY (US);
Brian S Lee, New York, NY (US);
Helmut H Tews, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Infineon Technologies North America Corp., San Jose, CA (US);
Abstract
A process for fabricating a gate oxide of a vertical transistor. In a first step, a trench is formed in a substrate, the trench extending from a top surface of the substrate and having a trench bottom and a trench side wall. The trench side wall comprises a <100> crystal plane and a <110> crystal plane. Next, a sacrificial layer having a uniform thickness is formed on the trench side wall. Following formation of the sacrificial layer, nitrogen ions are implanted through the sacrificial layer such that the nitrogen ions are implanted into the <110> crystal plane of the trench side wall, but not into the <100> crystal plane of the trench side wall. The sacrificial layer is then removed and the trench side wall is oxidized to form the gate oxide.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile