The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
Dec. 09, 1999
Mahalingam Nandakumar, Richardson, TX (US);
Greg C Baldwin, Plano, TX (US);
Andrew T Appel, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A first test structure (40) is used to measure both the gate resistance/linewidth and transistor performance. A gate line (42) crosses a moat region (44) with source (48) and drain (50) regions formed on either side of the gate line (42). The gate line (42) is connected to four probe pads (52) in an H configuration for accurate linewidth measurements. A second test structure (70) may be used alone or in conjunction with the first test structure. A single gate line (72) crosses a moat region (74) several times. This allows both capacitance and gate gate-resistance measurements with the same test structure and for more accurate TLD measurement.