The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2000
Filed:
May. 17, 1999
Applicant:
Inventors:
Chih-Ta Wu, Hsinchu, TW;
Wen-Jet Su, Tainan, TW;
Tun-Fu Hung, Kaohsiung Hsien, TW;
Ming-Ren Chi, Hualien Hsien, TW;
Assignee:
Mosel Vitelic, Inc., , TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438435 ; 438624 ; 438787 ;
Abstract
A method for fabricating a trench isolation is disclosed. First, a first insulated layer having a void is formed within the trench of the semiconductor. Next, the upper portion of said first insulated layer is etched to remove the void of said first insulated layer. Then, a second insulated layer having a void is formed over the first insulated layer. Next, the upper portion of said second insulated layer is etched to remove the void of said second insulated layer, thereby forming a trench isolation including the remainder of said first and second insulated layers.