The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Sep. 17, 1998
Hironori Sakamoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A diffusion simulating method which is capable of defining an impurity flux even if one impurity in one material region is changed into plural types of impurities in the other material region on a material interface. For simulating the diffusion of the impurities in a system which includes a first material region, a second material region and a interface disposed between the first material region and the second material region, impurity flux J(i.sub.A,j.sub.B) on the A/B interface is defined between optional impurity i.sub.A in material region A and optional impurity j.sub.B in material region B. Then, total fluxes J.sup.total (i.sub.A), J.sup.total (j.sub.B) of each type of impurity are determined and added to impurity diffusion equations, and simultaneous equations are set up by these diffusion equations and solved.