The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Nov. 20, 1998
Kazuhiko Itaya, Yokohama, JP;
Hidetoshi Fujimoto, Kawasaki, JP;
Johji Nishio, Kawasaki, JP;
Mariko Suzuki, Yokohama, JP;
Lisa Sugiura, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationship