The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
May. 05, 1998
Suguru Tabara, Hamamatsu, JP;
Hiroshi Naito, Hamamatsu, JP;
Yamaha Corporation, , JP;
Abstract
A method of manufacturing a semiconductor device includes the steps of: a) forming a wiring layer on a semiconductor substrate, the wiring layer being an Al or Al alloy layer, or a laminated wiring layer including an Al or Al alloy layer and a Ti or Ti alloy layer formed thereon; b) coating a resist layer on the wringing layer and patterning the resist layer to form a wiring resist pattern; c) patterning the wiring layer to form a wiring pattern 3 by using the wiring resist pattern as a mask; d) forming an interlayer insulating film 5 on the semiconductor substrate to cover the wiring pattern; e) coating a resist layer on the interlayer insulating film and patterning the resist layer to form a connection hole resist pattern 6; f) dry-etching the interlayer insulating film with an etching gas containing fluorine to form a connection hole reaching the wiring pattern 3, by using the connection hole resist pattern as a mask; g) after the step f), rinsing the semiconductor substrate in a liquid 10 made of a material selected from a group consisting of water, alcohol, pyridine, and combinations thereof; and h) after the step g), ashing the connection hole resist pattern 6.