The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2000
Filed:
Sep. 29, 1999
Jacson Liu, Hsinchu Hsien, TW;
Jing-Xian Huang, Hsinchu, TW;
Mosel Vitelic, Inc., Hsinchu, TW;
Abstract
A simplified method for forming a self-aligned contact hole is disclosed. The method comprises the steps of (a) providing a semiconductor substrate having a gate electrode and a diffusion region thereon; (b) forming a conformal layer of etch barrier material overlying the substrate surface including the diffusion region and the upper surface and the sidewalls of the gate electrode; (c) forming an insulating layer overlying the barrier layer; (d) etching an opening through the insulating layer self-aligned and borderless to the diffusion region by using the barrier layer as an etch stop; and (e) anisotropically etching the barrier layer underneath the opening, thereby exposing the diffusion region and simultaneously forming a spacer of the etch barrier material on the sidewall of the gate electrode.