The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2000

Filed:

Nov. 24, 1997
Applicant:
Inventors:

Michael A Todd, Danbury, CT (US);

Thomas H Baum, New Fairfield, CT (US);

Gautam Bhandari, Danbury, CT (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B / ; C01B / ; C07F / ;
U.S. Cl.
CPC ...
423249 ; 423645 ; 4236477 ; 427250 ; 427252 ; 427531 ; 427576 ; 427585 ; 556 46 ; 556 52 ; 556 58 ; 556 70 ; 556 87 ; 556112 ; 556121 ; 556136 ; 556140 ; 556170 ;
Abstract

A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (.sup.2.sub.1 H) or tritium (.sup.3.sub.1 H) isotope. The metal constituent of such metal hydride may be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.


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