The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Sep. 12, 1997
Applicant:
Inventors:
Liang-Gi Yao, Taipei, TW;
Chung-Ju Lee, Hsinchu, TW;
Yue-Feng Chen, Hsinchu, TW;
Wei-Ray Lin, Yi Lan, TW;
Yeur-Luen Tu, Taipei, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438692 ; 438697 ; 438723 ; 438738 ; 438743 ; 216 38 ;
Abstract
A method of planarizing a structure having an interpoly layer is disclosed. The method includes forming an undoped silica glass layer on at least a polysilicon region formed on a semiconductor substrate. Next, a spin-on-glass layer is formed over the undoped silica glass layer. Finally, the spin-on-glass layer is etched back, thereby planarizing the structure having the interpoly layer.