The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Jan. 13, 1999
Jin-hwan Hahm, Seoul, KR;
Chang-jin Kang, Kyungki-do, KR;
Samsung Electronics Co. Ltd., Suwon, KR;
Abstract
A capping film having a lower etch rate than a tungsten film is formed thereon and a photoresist layer is formed on the capping film. Preferably, the capping film is a titanium-based layer or an aluminum-based layer. After a photoresist pattern is formed by exposing and developing the photoresist film, the tungsten film is patterned by a dry etch method. During the etching of the tungsten film, the capping film reacts with the etching material to form a polymer which serves as a hard mask for the tungsten film. Preferably, the capping film also has a lower reflectivity at the exposing wavelength for the photoresist than the tungsten film, so the exposure of the photoresist may be controlled. Alternatively, or additionally, an anti-reflective film is provided between the capping film and the photoresist to further reduce the effect of the reflection of the tungsten film. Thus, patterning failures can be prevented. Such a method is particularly advantageous when the tungsten film pattern formed thereby is to be used as a bit line in a semiconductor device, particularly a pattern having a design rule of 0.34 .mu.m or less.