The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Sep. 17, 1998
Shih-Shiung Chen, Hsin-Chu, TW;
Hsiang-Chung Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new method of preventing passivation keyhole damage and resist extrusion using a hydrophillic solvent before photoresist coating is described. Semiconductor device structures are formed in and on a semiconductor substrate and covered by an insulating layer. Metal lines are formed overlying the insulating layer wherein there is a gap between two of the metal lines. A passivation layer is deposited overlying the metal lines wherein the gap is not filled completely by the passivation layer. The passivation layer is coated with a hydrophillic solvent wherein the hydrophillic solvent completely fills the gap. The passivation layer is coated with a photoresist layer which is exposed and developed to form a photoresist mask. The hydrophillic solvent completely filling the gap allows a uniform thickness photoresist layer. The passivation layer is etched away where it is not covered by the photoresist mask where a bonding pad is formed.