The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Nov. 12, 1997
Takayuki Yagi, Yokohama, JP;
Junichi Kobayashi, Ayase, JP;
Yasushi Kawasumi, Fujisawa, JP;
Genzo Momma, Hiratsuka, JP;
Kenji Makino, Yokohama, JP;
Kei Fujita, Sagamihara, JP;
Yasushi Matsuno, Atsugi, JP;
Yukihiro Hayakawa, Yokohama, JP;
Masahiro Takizawa, Kawasuki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.