The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Aug. 03, 1998
Applicant:
Inventor:
Tsun-Tsai Chang, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257233 ; 257435 ; 257461 ;
Abstract
The invention provides a photodiode structure having a first conductive type substrate and at least an isolation region, the photodiode structure comprising a doped second conductive type region, wherein the doped second conductive type region is formed in the substrate at a distance from the neighboring isolation region, and a mask layer covering at least a peripheral strip near the edge of the isolation region so that the doped second conductive type region is exposed.
Chang, Tsun-Tsai. (2000). Photodiode structure having mask to reduce leakage current (U.S. Patent No. 6140670). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6140670
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