The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Oct. 28, 1998
J S jenq, Pingtung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a self-aligned node contact window starts by forming a bit line on a substrate having a transistor, in which the transistor includes a first source/drain region and a second source/drain region. The bit line is coupled electrically with the first source/drain region of the transistor and there is a cap layer and a first conductive layer formed on the bit line. An insulating layer that is conformal with the bit line, the cap layer and the first conductive layer is formed to serve as an etching stop layer for subsequently forming a conductive spacer. A conductive spacer is formed on the insulating layer of the sidewall of the bit line, the cap layer and the first conductive layer. Using the first conductive layer and the conductive spacer as a mask, an etching process is performed to form a self-aligned node contact window and the second source/drain is thus exposed.