The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Jul. 13, 1999
Meng-Jin Tsai, Kaohsiung, TW;
Abstract
A method for fabricating a photodiode is described in which a pad oxide layer and a silicon nitride layer are sequentially formed on a provided substrate. The silicon nitride layer, and the pad oxide layer and the substrate are sequentially patterned to form an opening in the substrate. A spacer is formed on the sidewall of the opening. With the spacer and the silicon nitride layer serving as a mask, the substrate is etched forming a trench in the substrate. An oxide plug is then formed filling the trench and the opening using the conventional shallow trench fabrication method. A P-well region and an N-well region are formed respectively on two sides of the trench. An N+ type region and a P+ type region are formed respectively on two sides of the opening; wherein the N+ type region is located above the P-well region and the P+ type region is located above the N-well region