The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Jun. 17, 1998
Young-Jin Park, Poughkeepsie, NY (US);
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A method for forming a metalization system is provided. The method includes providing a substrate. A dielectric layer is formed over a surface of the substrate. A plurality of via holes is formed into a surface and the dielectric layer, such holes passing through the dielectric layer. Recesses are formed in the surface of the dielectric layer, such recesses terminating in a portion of the plurality of via holes passing through the dielectric layer. A metalization layer is deposited over the surface of the dielectric layer, portions of the metalization layer passing through the via holes, portions of the metalization layer being disposed in the recesses and portions of the metalization layer being disposed on the surface of the dielectric layer. The metalization layer is patterned into a plurality of conductors, one portion of the conductors being disposed on one level of the dielectric layer and another portion of the conductors disposed in the recesses. A metalization system having a substrate with a dielectric layer disposed over such substrate. A plurality of electrical conductors is provided, one portion of the conductors being disposed on one level of the dielectric layer and another portion of the conductors being recessed in a surface portion of the dielectric layer.