The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Mar. 06, 1997
Applicant:
Inventor:
Francois Hebert, San Mateo, CA (US);
Assignee:
Spectrian Corporation, Sunnyvale, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257341 ; 257343 ; 257401 ;
Abstract
In an RF/microwave power amplifier comprising a linear array of MOSFET transistors in a semiconductor substrate, the transistors having gate and drain bond pads between adjacent transistors, drain to gate feedback capacitance is reduced by offsetting the drain bond pads from the gate bond pads. Bond wires to the drain bond pads extend in the offset direction from the drain bond pads, and bond wires to the gate bond pads extend from the gate bond pads in the opposite direction to reduce capacitive coupling between the bond wires and reduce the length of the bond wires.