The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Aug. 07, 1998
Applicant:
Inventors:
Hirotoshi Kubo, Gunma, JP;
Hiroaki Saito, Gifu, JP;
Masanao Kitagawa, Gunma, JP;
Eiichiroh Kuwako, Gunma, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257328 ; 257329 ; 257341 ; 438212 ;
Abstract
The present invention improves the characteristic of a trench-type vertical MOSFET. When a trench 23 serving as a gate 25 is formed, it is made in a shape of '.gamma.' which is convex toward the inside of the trench. Thus, the surface area of the trench is reduced so that both gate-source capacitance and gate-drain capacitance can be reduced, thereby shortening the switching time of the MOSFET.