The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
May. 17, 1999
Applicant:
Inventor:
Claymens Lee, Fengshan, TW;
Assignee:
United Semiconductor Corp, Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438585 ; 438586 ; 438592 ; 438664 ; 438719 ;
Abstract
A method of forming the gate terminal of a device. The method includes forming spacers on top of the gate polysilicon layer and near the side edges thereof, and then etching the gate polysilicon layer to form a groove using the spacers as a mask. Hence, the exposed surface area of the gate polysilicon layer is increased. Finally, a metal silicide layer is formed over the gate polysilicon layer, producing a low resistance gate.