The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Dec. 30, 1997
Applicant:
Inventors:
Siddhartha Das, Sunnyvale, CA (US);
Chunlin Liang, San Jose, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438585 ; 438591 ; 438593 ; 438949 ;
Abstract
A process for patterning a gate of a semiconductor device is provided. A gate material layer is formed upon an oxide layer of a substrate. A photoresist layer is formed upon the gate material layer. A portion of the photoresist layer is photo-oxidized. The portion defines a gate pattern. The portion of the photoresist layer is converted into a hard mask. A portion of the gate material layer is patterned with the hard mask. The portion of the gate material layer defines a gate.