The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Apr. 15, 1999
Tadashi Fukase, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The invention relates to an improvement in formation of a gate electrode. In the invention, there are formed first and second oxides on a surface of a substrate. The second oxides have a top surface higher by a height H than top surfaces of the first oxides. A gate electrode composed of a polysilicon film and a silicide film deposited on the polysilicon film is formed so that the polysilicon film is planarized at a level higher than top surfaces of the first oxides but lower than top surfaces of the second oxides. The invention prevents excessive etching of the polysilicon film without fabrication steps being increased, and thus makes it possible to form a gate electrode having a dimension defined by a mask.