The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Sep. 14, 1998
William Lu, Tai-Ping, TW;
Tsung-Yuan Hung, Tainan, TW;
United Semiconductor Corp., Hsinchu, TW;
Abstract
A method for fabricating a STI structure includes a pad oxide layer and a hard masking layer are sequentially formed over a semiconductor substrate. A trench is formed in the substrate by patterning over the substrate. A liner oxide layer is formed over a side-wall of the trench in the substrate. An isolating layer by APCVD and an isolating layer by HDPCVD are sequentially formed over the substrate, in which the height of the CVD isolating layer within the trench is lower than the height of the hard masking layer. A CMP process is performed, using the hard masking layer as a polishing stop. The hard masking layer and the pad oxide layer are removed to accomplish the STI structure.