Process for simultaneously fabricating a stack gate flash memory cell

Abstract

A process for integrating the fabrication of a flash memory cell, on a first region of a semiconductor substrate, with the fabrication of salicided peripheral devices, on a second region of the semiconductor substrate, has been developed. The flash memory cell features SAC contact structures, located between stacked gate structures, contacting underlying source/drain regions. The stack gate structures are comprised of a polycide control gate shape, on a dielectric layer, overlying a polysilicon floating gate shape. The performance of the peripheral devices are increased via use of metal silicide layers, located on the top surface of a polysilicon gate structure, as well as on the adjacent heavily doped source/drain regions.