The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
May. 21, 1999
Meng-Lin Yeh, Taipei, TW;
United Semiconductor Corp, Hsinchu, TW;
Abstract
A method of forming a test key architecture on a silicon wafer. The method includes forming trench isolation regions between a source region and a drain region. Thereafter, a plurality of active regions are formed in parallel above the trench isolation regions such that the smallest possible width for each active region is chosen to reduce overall area occupation and increase the number of test keys. Next, a long pass gate is formed above the trench isolation regions, crossing and covering the parallel-connected active regions. Consequently, the effect due to stress-induced defect and the probability of leakage current due to parasitic device effect are greatly increased.