The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2000

Filed:

Jun. 29, 1998
Applicant:
Inventors:

Edward J Bawolek, Chandler, AZ (US);

Robert C Sundahl, Phoenix, AZ (US);

Berni W Landau, Beaverton, OR (US);

Stephen B Gospe, Fremont, CA (US);

Jack S Uppal, San Jose, CA (US);

Jung S Kang, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
2502081 ; 2502141 ; 257649 ;
Abstract

The present invention is an image sensor and its fabricating method. The image sensor comprises a photodiode and a dielectric structure. The photodiode is responsive to an amount of incident light from a light source. The dielectric structure is on top of the photodiode and is placed between the photodiode and an inter-level dielectric (ILD) oxide layer. The dielectric structure contains a dielectric material. The ILD oxide layer is made of an oxide material and has an ILD oxide thickness.


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