The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2000
Filed:
Nov. 17, 1998
Applicant:
Inventor:
Hideki Gomi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438781 ; 438780 ; 438778 ;
Abstract
A polymer of parylene is desirable as an inter-level insulating layer in semiconductor circuits because of its small dielectric constant. However, dimers and monomers of parylene in the source gas are taken into the deposited polymer layer during the deposition. These residual dimers and monomers outgas during the deposition of silicon oxide over the polymer layer, which tends to result in peeling from the polymer layer. In order to prevent the silicon dioxide layer from peeling from the resultant semiconductor structure, the polymer layer is annealed before deposition of the silicon oxide for first releasing the residual dimers and monomers from the polymer layer.