The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2000
Filed:
Nov. 19, 1998
Frank S Johnson, Richardson, TX (US);
Peter S McAnally, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for fabricating a spacer in a transistor. The method comprises the steps of forming a stepped feature 384, 386 at a surface of a semiconductor body 340, the stepped feature having a lateral face substantially parallel to the surface and an angled face substantially perpendicular to the surface. An insulating layer 410 is formed over the lateral and angled faces of the stepped feature 384, 386 and a sacrificial layer 404 is formed over the insulating layer and over the lateral and angled faces of the stepped feature. The portion of the sacrificial layer over the lateral face is removed to expose portions of the insulating layer and to leave a portion of the sacrificial layer to cover the angled face of the stepped feature. Finally, the exposed portions of the insulating layer are removed to leave an L-shaped insulator layer, such as may be useful to insulate the base electrode from the emitter electrode in a bipolar transistor.