The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2000
Filed:
Aug. 28, 1998
Applicant:
Inventors:
Weng-Yi Chen, Chupei, TW;
Kuen-Chu Chen, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
42725518 ; 42725527 ; 42725529 ; 4272557 ; 427 99 ;
Abstract
An apparatus and a method of forming a thick polysilicon layer are provided. An additional pipeline is introduced into a chamber that is used for depositing polysilicon layers. A thin silicon dioxide film is formed using oxygen after forming a first doped polysilicon layer with a constant thickness. Then a second doped polysilicon layer with a constant thickness is deposited on the thin silicon dioxide layer. The steps described above are repeated until a desired thickness is attained.