The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2000
Filed:
Jul. 30, 1998
Applicant:
Inventors:
William Joseph Dauksher, Mesa, AZ (US);
Pawitter J Mangat, Chandler, AZ (US);
Roy Allen Huston, Mesa, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430296 ;
Abstract
A method for patterning a semiconductor device using a lithographic mask (300) having a membrane layer (204) overlying an opening in a substrate. The membrane layer supports a scattering layer (208), and has a varying content of silicon through a thickness thereof, that is, along the direction that is normal to the substrate. In one embodiment, the content of silicon increases along the normal direction, outward from the substrate. The mask has improved durability and reduces occurrences of pinhole defects in the membrane layer.