The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
Nov. 13, 1998
Applicant:
Inventors:
Yu-Shan Tai, Hsinchu, TW;
H T Yang, Hsinchu, TW;
Hsueh-Hao Shih, Hsinchu, TW;
Kuen-Chu Chen, Chu-Tung Town, TW;
Assignee:
United Integrated Circuits Corp., Hsinchu, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438287 ; 438773 ;
Abstract
A method for fabricating gate oxide includes a dilute wet oxidation process with additional nitrogen and moisture and an annealing process with a nitrogen base gas, wherein the volume of additional nitrogen is about 6-12 times of the volume of the additional moisture. The method according to the invention improves the electrical quality of the gate oxide by raising the Q.sub.bd and by reducing the leakage current of the gate oxide.