The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2000
Filed:
Nov. 09, 1998
Applicant:
Inventors:
Ming-I Chen, Tainan Hsien, TW;
Yung-Chieh Fan, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257232 ; 257233 ; 257292 ; 257294 ; 257436 ; 257446 ; 438 60 ; 438 69 ; 438 75 ;
Abstract
A CMOS sensor structure and method of manufacture that includes the fabrication of a special shallow trench isolation structure. Besides isolating the active region for forming the CMOS sensor device, the shallow trench isolation structure has a special reflective plug embedded inside capable of reflecting incoming light onto the sensitive region of the CMOS sensor. Hence, the interactive length of incoming light with the light sensitive region can be increased, thereby increasing the contrast ratio and light sensitivity of the CMOS sensor.