The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2000
Filed:
Dec. 16, 1998
Applicant:
Inventors:
Cheng-Yu Fang, Taipei, TW;
Chih-Chiang Liu, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438782 ; 438633 ; 438692 ; 438780 ;
Abstract
A method of spin-on-glass planarization. A spin-on-glass layer is formed on a substrate. An accuflo layer with a better fluidity than the spin-on-glass material is formed on the spin-on-glass layer. The accuflo layer and the spin-on-glass layer are etched back by two etching steps with different etching rate. The accuflo layer after being etched is stripped. A dielectric layer is formed.
Fang, Cheng-Yu. (2000). Method of spin-on-glass planarization (U.S. Patent No. 6117798). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6117798
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile