The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2000
Filed:
Jul. 24, 1998
Applicant:
Inventors:
Sung Kun-Yu, Hsinchu, TW;
Chien-Hung Chen, Taipei, TW;
Yi-Fu Chung, TaiNan, TW;
Kuang-Chao Chen, Hsinchu, TW;
Assignee:
Mosel Vitelic Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438592 ; 438488 ; 438597 ; 438654 ; 438652 ;
Abstract
A method for planarizing the interface of polysilicon and silicide in a polycide structure is presented in this invention. It is by regulating the process temperature when depositing polysilicon to meanwhile improve its planarization. At first, a doped polysilicon layer is deposited on a semiconductor substrate in the integrated circuits, then immediately after the deposition of an undoped polysilicon, the process temperature is reduced and the treatment of purging is followed with, finally, a metal silicide is formed on the undoped polysilcion.