The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Dec. 17, 1998
Kunihiro Fujii, Tokyo, JP;
Ken Inoue, Tokyo, JP;
Kuniko Miyakawa, Tokyo, JP;
Kaoru Mikagi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in, the form of a substitutional solid solution.