The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Nov. 18, 1998
Applicant:
Inventor:
Meng-Jin Tsai, Hsinchu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438435 ; 438424 ; 438437 ; 148D / ;
Abstract
A method of fabricating a shallow trench isolation includes formation of a trench in a substrate. An oxide layer is formed on the substrate to fill the trench. A barrier layer and a coating layer are formed in sequence over the substrate. A first etching step is performed to remove a portion of the coating layer and the oxide layer to at least expose the oxide layer on the mask layer. A second etching step is performed to remove the other portion of the coating layer and the oxide layer until exposing the mask layer. Thus, micro-scratches and defects do not happen and thus the invention prevents the occurrence of bridging effect and short circuits.