The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
May. 18, 1998
Applicant:
Inventor:
Nanseng Jeng, Boise, ID (US);
Assignee:
Microm Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438427 ; 438426 ; 438430 ; 438435 ; 438255 ; 438443 ; 438446 ; 438428 ;
Abstract
A method of forming field oxide during the manufacture of a semiconductor device comprises the steps of providing a semiconductor wafer having a plurality of recesses or trenches therein. A layer of texturized polycrystalline silicon is formed within the recesses, which is subsequently oxidized to form field oxide. The instant method reduces stress imparted to the die as the texturized polycrystalline silicon has voids or holes which absorb the expanding volume as the silicon is oxidized to form field oxide.