The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Mar. 18, 1999
Suguru Tabara, Hamamatsu, JP;
Yamaha Corporation, Tokyo, JP;
Abstract
A resist pattern having a high-density pattern area and a low-density pattern area is formed on a layered MNOS capacitor structure composed of a Ti(O)N layer and a WSi.sub.2 layer formed on nitride/oxide insulating layer on a semiconductor substrate. After the etching of the layered structure in the low-density resist pattern area is finished, the layered structure is further processed with plasma of HBr only, a mixed gas of a halogen-containing gas and oxygen gas, or a fluorine-containing gas, for a desired period of time, to give electron shading damage. In this plasma processing, the Ti(O)N layer is etched little. The electron shading damage is measured through the change in the flat band voltage of the MNOS capacitor.