The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
Feb. 24, 1998
Applicant:
Inventors:
Assignee:
Korea Advanced Institute of Science and Technology, Daejun, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
117 94 ; 117104 ; 117929 ; 438105 ; 438547 ; 438548 ; 438558 ; 438565 ; 438567 ; 438706 ;
Abstract
A method for making n-type semiconducting diamond by use of CVD in which n-type impurities are doped simultaneously with the deposition of diamond. As the n-type impurities, an Li compound and a B compound, both, are used at once. After doping, a diamond film thus obtained is etched to peel off its surface. The n-type semiconducting diamond is superior in specific resistivity, 10.sup.-2 .OMEGA.cm or less.