The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
May. 19, 1999
Ching-Nan Yang, Hsinchu Hsien, TW;
Chia-Chen Liu, Hsinchu, TW;
Worldwide Semiconductor Manufacturing Corp., Hsinchu, TW;
Abstract
The method includes forming a first polysilicon on a substrate. Subsequently, a first dielectric layer is formed on the first polysilicon. A second polysilicon is pattern on the first dielectric layer, followed by depositing a second dielectric layer formed thereon. An etching is performed to etch the second dielectric layer, the second polysilicon layer through the first dielectric layer for generating an opening. An oxide layer is formed on the side-wall of the opening. A doped polysilicon layer is located at the lower portion of the opening. An undoped polysilicon layer is deposited on the second dielectric layer and refilled into the opening. An etching back is carried out to remove the layer over the second dielectric layer. A third polysilicon is patterned on the surface of the second dielectric layer. An isolation layer is deposited over the feature. A plurality of contact holes are generated in those isolation layers.