The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2000

Filed:

Mar. 18, 1999
Applicant:
Inventor:

Wen-Pin Chang, Ilan Hsien, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430322 ; 430312 ;
Abstract

Disclosed is a method for forming a pattern by which the T-top formation problem of chemically amplified resists is eliminated. Preferably, an i-line resist is employed as a barrier layer to protect the underlying chemically amplified resist from base attack. The i-line resist used herein can be exposed and developed by a normal deep-UV lithography process without substantially affecting the performance of chemically amplified resists.


Find Patent Forward Citations

Chang, Wen-Pin. (2000). Method for forming pattern (U.S. Patent No. 6107006). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6107006

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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